电致发光
光致发光
材料科学
发光
光电子学
硅
晶体硅
光伏系统
直线(几何图形)
扫描线
光学
纳米技术
像素
电气工程
灰度
工程类
物理
数学
图层(电子)
几何学
作者
Iskra Zafirovska,Mattias K. Juhl,Thorsten Trupke
标识
DOI:10.1109/pvsc.2018.8547434
摘要
Luminescence inspection of modules is currently being adopted as a standard practice in the photovoltaic industry. This paper presents a comparison of electroluminescence and photoluminescence imaging on industrial crystalline silicon modules, employed with a line scan system. We find that specific defects appear differently in the two techniques due to the difference in excitation method. Line scan photoluminescence images enable differentiation of series resistance defects from recombination defects and can identify the presence of encapsulant discolouration. Line scan electroluminescence images allow defects that prevent majority carrier transport to be evaluated. The use of both techniques enables robust defect characterisation.
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