异质结
半导体
带材弯曲
材料科学
密度泛函理论
费米能级
带隙
电场
氧化还原
电子转移
光电子学
载流子
工作职能
电子
凝聚态物理
化学
电极
计算化学
光化学
物理
无机化学
物理化学
量子力学
作者
Qizheng Zhuo,Yichuan Zhang,Zhongtian Fu,Tianfang Han,Xujie Liu,Jianliang Ou,Xinyang Xu
标识
DOI:10.1016/j.apsusc.2022.154038
摘要
In this work, the PtS2/MoSe2 heterojunction was verified as a S-scheme heterojunction with strong redox ability by density functional theory calculations. Firstly, the band structure and density of states of PtS2/MoSe2 heterojunction are systematically investigated. The results show that the band gap of the PtS2/MoSe2 heterojunction is effectively narrowed compared to the pristine semiconductor, resulting in a red shift of the absorption edge; then, According to the analysis of work function, the height difference of the Fermi level induces the spontaneous flow of electrons, resulting in band bending and the establishment of the built-in electric field, which will promote the recombination (separation) of electron-hole pairs with weak (strong) redox ability at the interface. The carriers with strong redox ability are effectively separated and preserved, which prolongs the lifetime of photogenerated carriers and improves the photocatalytic efficiency.
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