自旋电子学
材料科学
凝聚态物理
磁化
垂直的
铁磁性
拓扑绝缘体
消散
光电子学
工程物理
磁场
物理
几何学
数学
量子力学
热力学
作者
Quanjun Pan,Yuting Liu,Hao Wu,Peng Zhang,Hanshen Huang,Chris Eckberg,Xiaoyu Che,Yingying Wu,Bingqian Dai,Qiming Shao,Kang L. Wang
标识
DOI:10.1002/aelm.202200003
摘要
Abstract Recent advances in using topological insulators (TIs) with ferromagnets (FMs) at room temperature have opened an innovative avenue in spin‐orbit torque (SOT) nonvolatile magnetic memory and low dissipation electronics. However, direct integration of TIs with perpendicularly magnetized FM, while retaining an extraordinary charge‐to‐spin conversion efficiency ( > 100%), remains a major challenge. In addition, the indispensable thermal compatibility with modern CMOS technologies has not yet been demonstrated in TI‐based structures. Here, high‐quality integration of a perpendicularly magnetized CoFeB/MgO system with TI through a Mo insertion layer is achieved and efficient current‐induced magnetization switching at ambient temperature is demonstrated. The calibrated energy efficiency of TIs is at least 1 order magnitude larger than those found in heavy metals. Moreover, it is demonstrated that the perpendicular anisotropy of the integrated CoFeB/MgO system and the current‐induced magnetization switching behavior are well‐preserved after annealing at > 350 ° C, offering a wide temperature window for thermal treatments. This thermal compatibility with the modern CMOS back‐end‐of‐line process achieved in these TI‐based structures paves the way toward TI‐based low‐dissipation spintronic applications.
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