记忆电阻器
非线性系统
电压
电气工程
电子工程
计算机科学
物理
工程类
量子力学
作者
Zhen‐Yu Yin,Heng Tian,Guanghao Chen,Leon O. Chua
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2015-01-05
卷期号:62 (4): 402-406
被引量:87
标识
DOI:10.1109/tcsii.2014.2387653
摘要
Memristor, memcapacitor, and meminductor are new fundamental circuit elements, whose properties depend on the history of devices. This paper presents the physical analysis of these memory devices. Three simple examples are given for the memristor, memcapacitor, and meminductor, and are then generalized to reveal their general physical origin. It is found that the memristance, memcapacitance, and meminductance are caused by different combinations of nonlinear electric responses. The mathematical expressions for the currents through any voltage-driven memristor, memcapacitor, and meminductor are given, and the corresponding expressions for the memristance, memcapacitance, and meminductance are derived. Moreover, a method to determine the charge-flux relationship of a memristor is proposed.
科研通智能强力驱动
Strongly Powered by AbleSci AI