超晶格
激光器
量子阱
材料科学
光电子学
砷化镓
包层(金属加工)
电子
电场
半导体激光器理论
级联
兴奋剂
电流密度
活动层
波长
凝聚态物理
二极管
光学
物理
化学
图层(电子)
冶金
复合材料
薄膜晶体管
量子力学
色谱法
作者
G. Strasser,S. Gianordoli,Lubos Hvozdara,W. Schrenk,K. Unterrainer,E. Gornik
摘要
We report the realization of an injection laser based on intraband transitions in a finite AlGaAs/GaAs superlattice. The active material is a 30 period sequence of injectors/active regions made from AlGaAs/GaAs quantum wells. By an applied electric field, electrons are injected into the second miniband of a chirped superlattice and relax radiative to the lowest miniband. At a heat-sink temperature of 10 K, the laser emission wavelength is 12.9 μm with peak optical powers exceeding 100 mW and a threshold current density of 9.8 kA/cm2. The maximum operating temperature is 50 K. For this device, a waveguide consisting of heavily doped GaAs cladding and low doped core layers has been used as a plasma-enhanced confinement.
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