Influence of Anti-ferromagnetic Exchange Interaction on the Curie Temperature of DMS

Curie temperature of diluted magnetic semiconductor (DMS) has a strong dependence on the hole carrier concentration. In this paper, we analyzed the influence of anti-ferromagnetic exchange interaction on the Curie temperature of DMS based on the local hole model. The results showed that the influence of anti-ferromagnetic exchange interaction on the Curie temperature is closely related to the concentration ratio of magnetic ions to holes. When ni/nc10000, the influence of anti-ferromagnetic exchange interaction on the Curie temperature is very noticeable. When ni/nc10, the above-mentioned influence will be significantly weakened. With the increase of hole concentration, the holes will greatly restrain the anti-ferromagnetic exchange interaction.