抛光
化学机械平面化
材料科学
X射线光电子能谱
磨料
薄脆饼
泥浆
纳米颗粒
兴奋剂
镧系元素
电介质
化学工程
分析化学(期刊)
复合材料
纳米技术
化学
光电子学
有机化学
离子
工程类
作者
Jie Cheng,Shuo Huang,Li Yang,Tongqing Wang,Liquan Xie,Xinchun Lu
标识
DOI:10.1016/j.apsusc.2019.144668
摘要
Ce3+ in CeO2, rather than Ce4+, is believed to provide assistance to the breaking up of SiO bond during chemical mechanical polishing (CMP) of silica. In the paper, lanthanide metals (La, Nd and Yb) doped CeO2 nanoparticles were synthesized by modified incipient impregnation method in order to improve the content of Ce3+ in CeO2 as polishing. X-ray photoelectron spectroscopy (XPS) experiments and density function theory (DFT) calculation demonstrate this approach could achieve surface doping of CeO2 nanoparticles, and facilitates the formation of oxygen vacancy and Ce3+ content. CMP experiments show that the polishing rate and the surface quality of silica wafer are obviously improved by using the doped CeO2 as abrasive particles. Especially for Nd/CeO2, content of Ce3+ increases from 0.146 to 0.235, the polishing rate of silica is accelerated by 29.6% in alkaline slurries, and a better surface quality (Sa = 9.6 Å) is obtained.
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