Ferroelectric Field Effect Transistors: Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption (Adv. Funct. Mater. 1/2020)

In article number 1906131, Gaokuo Zhong, Xiangli Zhong, Jiangyu Li, and co-workers develop an all-inorganic flexible ferroelectric field effect transistor (FeFET) based on an epitaxial Pb(Zr0.1Ti0.9)O3/ZnO heterostructure on a mica substrate, which not only operates under a small voltage and thus consumes low power, but also shows robust FeFET performance under large bending deformation, extended bending cycling cycles, and high temperature operation at 200 °C.