石墨烯
化学气相沉积
材料科学
原子层沉积
X射线光电子能谱
氮化硼
燃烧化学气相沉积
混合物理化学气相沉积
退火(玻璃)
外延
硼
电子衍射
纳米技术
分析化学(期刊)
化学工程
图层(电子)
薄膜
碳膜
衍射
化学
冶金
有机化学
色谱法
工程类
物理
光学
作者
Jessica Jones,Aparna Pilli,Veronica Lee,John Beatty,Brock Beauclair,Natasha Chugh,Jeffry A. Kelber
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2019-09-17
卷期号:37 (6)
被引量:11
摘要
In situ direct, epitaxial growth of multilayers of hexagonal boron nitride (h-BN) and graphene without physical transfer is of significant interest for the scalable production of graphene/h-BN heterostructures for device applications. Deposition on magnetic substrates is of particular interest for spin tunneling applications. X-ray photoelectron spectroscopy and low energy electron diffraction demonstrate epitaxial atomic-layer deposition (ALD) of multilayer h-BN(0001) on Ni(111) and subsequent deposition of azimuthally-aligned multilayer graphene on h-BN(0001)/Ni(111) by chemical vapor deposition. Boron nitride ALD was accomplished with alternating cycles of BCl3/NH3 at a 600 K substrate temperature, and subsequent annealing in ultrahigh vacuum. Subsequent deposition of graphene was achieved by chemical vapor deposition using ethylene (CH2CH2) at 1000 K.
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