卤化物
化学气相沉积
盐(化学)
过渡金属
卤素
石墨烯
碱金属
熔盐
无机化学
制作
化学工程
化学
沉积(地质)
材料科学
纳米技术
催化作用
有机化学
烷基
替代医学
沉积物
古生物学
病理
工程类
生物
医学
出处
期刊:iScience
[Cell Press]
日期:2021-11-01
卷期号:24 (11): 103229-103229
被引量:26
标识
DOI:10.1016/j.isci.2021.103229
摘要
Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.
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