Vertical quantum tunneling transport based on MoS2/WTe2 nanoribbons

The quantum electrical and thermal transport properties of band-to-band tunneling are studied in the van der Waals (vdW) vertical MoS2/WTe2 nanoribbon heterojunction as well as the lateral MoS2/WTe2 heterojunction. The computational method is based on the Green's function method within the tight-binding approach in the coherent regime. The numerical results show distinct properties, such as a noticeable rectification ratio (RR) and a negative differential resistance (NDR). This device can act as a vertical tunneling transistor structure. Besides, the MoS2/WTe2 nanoribbon devices with the armchair termination exhibit the highest value of the ZTe at μ=±0.72 eV leading to their improved thermoelectric properties. Our findings about the hybrid heterostructures thus shed a new light toward extend the applications of 2D monolayer transition metal dichalcogenides (TDMs) materials in electronic and optoelectronic devices.