Advances in Ga 2 O 3 -based memristor devices, modeling, properties, and applications for low power neuromorphic computing

-based memristor devices. To improve the device's behavior and performance improvement, a detailed analysis of many modeling and simulation techniques is given. Also, advanced characterization techniques, such as electrical, structural, and thermal evaluations, for studying artificial optoelectronic synaptic characteristics, which are important for use in computational neuroscience, are discussed in detail. The synaptic activities revealed that learning and memory processes were aided by potentiation and depression similar to those found in biological synapses. The most notable accomplishment is the realization of quaternary memory storage in a single device. This idea is supported by empirical evidence and simulations, which demonstrate the possibility of storing and maintaining multiple memory states. This study establishes oxide semiconductor memristors as a doorway to quaternary memory storage and improved synaptic functioning, paving the way for optoelectronic synaptic devices with greater memory capacity.