材料科学
异质结
过渡金属
范德瓦尔斯力
薄脆饼
比例(比率)
纳米技术
金属
工程物理
光电子学
冶金
催化作用
量子力学
分子
有机化学
化学
物理
工程类
作者
Shiwei Zhang,Yulong Hao,Shijie Hao,Xuemei Lu,Jie Zhou,Chen Fan,Jun Liu,Guolin Hao
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2025-05-16
卷期号:36 (23): 232004-232004
被引量:2
标识
DOI:10.1088/1361-6528/add9a9
摘要
Abstract Two-dimensional materials, as a promising class of emerging materials, are expected to overcome the technical bottlenecks of silicon-based device miniaturization and enable the continuation of ‘Moore’s Law’ due to their unique physical and chemical properties. Notably, transition metal dichalcogenides (TMDs) and heterojunctions have demonstrated unprecedented potential applications in novel electronic and optoelectronic devices. In recent years, breakthroughs have been continuously made in the preparation techniques and growth strategies of wafer-scale TMDs and heterostructures. Therefore, it is essential to systematically and comprehensively summarize the latest progress in wafer-scale synthesis. In this article, the preparation techniques and strategies of wafer-scale TMDs and heterojunctions are classified and summarized. Firstly, various wafer-scale synthesis techniques are described and the advantages and disadvantages of each technique in wafer-level preparation are compared. On this basis, the synthesis strategies derived from chemical vapor deposition are introduced and discussed comprehensively. Finally, we discuss the challenges and prospects associated with the preparation of wafer-scale materials and propose some feasible solutions.
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