X射线光电子能谱
兴奋剂
拉曼光谱
噻吩
材料科学
聚合物
化学电阻器
导电聚合物
纳米技术
化学工程
化学
光电子学
有机化学
光学
复合材料
工程类
物理
作者
Zhu Cao,Gang Zhou,Haoyu Zheng,Yangxuan Liu,Hengda Sun,Haiquan Zhang,Kai Xu
标识
DOI:10.1021/acsapm.3c02439
摘要
Nitrogen dioxide (NO2) is a potent greenhouse gas produced through the combustion of fossil fuels, posing significant threats to both the environment and human health. This study focuses on the development of a low-cost and highly sensitive NO2 sensor for improved public health and environmental protection. A chemiresistive NO2 sensor based on a thiophene polymer with oligoethylene glycol side chains (p(g42T-TT)) is presented. The sensor operates on the principle of change in the electrical resistance of the sensing material upon exposure to NO2 gas. P(g42T-TT) exhibits a high sensitivity to NO2 due to its high highest occupied molecular orbital (HOMO) level, making it susceptible to oxidation by NO2. The doping process was validated through UV–vis–NIR spectroscopy, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The film morphology analysis using GIWAX and AFM techniques confirmed the partially crystallized structures in the NO2-doped p(g42T-TT) film. The doped film exhibited a conductivity of 12 S/cm and a Seebeck coefficient of 1.6 μV/K, indicating the high doping level of p(g42T-TT). The chemiresistive NO2 sensor was tested under various concentrations and showed an ultrahigh sensitivity with a response of 3.58 ± 2.38 × 100% at the 20 ppb level, which is among the highest reported sensitivity in conducting polymer (CP)-based chemiresistive NO2 sensors. The simplicity, flexibility, and high sensitivity of the p(g42T-TT)-based chemiresistor make it a promising candidate for one-time use in NO2 sensing applications. These findings provide valuable insights for further advancements in chemiresistive gas sensor technologies.
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