外延
材料科学
基质(水族馆)
主管(地质)
卤化物
入口
相(物质)
气相
图层(电子)
光电子学
管(容器)
分析化学(期刊)
化学
复合材料
机械工程
热力学
色谱法
地貌学
物理
地质学
工程类
有机化学
无机化学
海洋学
作者
Galia Pozina,Chih-Wei Hsu,Natalia Abrikossova,Carl Hemmingsson
出处
期刊:Crystals
[MDPI AG]
日期:2022-12-09
卷期号:12 (12): 1790-1790
标识
DOI:10.3390/cryst12121790
摘要
The development of growth processes for the synthesis of high-quality epitaxial layers is one of the requirements for utilizing the ultrawide band gap semiconductor Ga2O3 for high-voltage, high-power electronics. A halide vapor phase epitaxy (HVPE) process used to grow β-Ga2O3 layer was optimized by modifying the gas inlet, resulting in improved growth uniformity. A conventional tube acting as an inlet for the Ga precursor GaCl gas was replaced with a shower head with four outlets at 45 degrees to the horizontal axis of the reactor. The modification was performed based on numerical calculations of the three-dimensional distribution of gases inside the growth chamber with different designs of the GaCl precursor inlet. It was shown that variation in the Ga/O ratio over the substrate holder was ~10% for a shower head compared with ~40% for a tube. In addition, growth with a tube leads to the film thickness varying by a factor of ~4 depending on the position on the holder, whereas when using a shower head, the thickness of the grown Ga2O3 layers became much more uniform with a total spread of just ~30% over the entire substrate holder.
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