光电子学
材料科学
激光阈值
硅
激光器
超晶格
量子阱
连续波
分子束外延
基质(水族馆)
外延
化学气相沉积
金属有机气相外延
半导体激光器理论
波长
图层(电子)
光学
半导体
纳米技术
海洋学
物理
地质学
作者
Chen Jiang,Hao Líu,Jun Wang,Xiaomin Ren,Qi Wang,Zhuoliang Liu,Bojie Ma,Kai Li,Ren Ren,Yidong Zhang,Shiwei Cai,Yongqing Huang
摘要
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers including four sets of five-period strained-layer superlattices and the laser-structural layers were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry-Perot ones with a stripe width of 21.5 um and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength is around 980 nm and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility.
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