光电探测器
响应度
紫外线
光电子学
透射率
材料科学
宽带
平面的
肖特基势垒
肖特基二极管
光学
物理
计算机科学
二极管
计算机图形学(图像)
作者
Yuhan Pu,Yung C. Liang
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2024-01-01
卷期号:: 1-1
标识
DOI:10.1109/led.2023.3348972
摘要
In this letter, a high-performance ITO AlGaN/GaN ultraviolet (UV) broadband photodetector consisting of both ITO planar and non-planar Schottky structures to provide the dual carrier-collection mechanism is designed and prototyped. The fabricated photodetector can respond exceedingly well and achieve beyond the conventional ITO optical transmittance limitation for UV broadband detection, covering UVA, UVB and UVC spectral bands. Its performance at 255 nm wavelength gives a double magnitude of responsivity corresponding to the ITO transmittance limit at UV intensity of 3.49 × 10 -2 mW/cm 2 . This innovative design largely extends the applicable scope of ITO photodetectors in UV broadband region.
科研通智能强力驱动
Strongly Powered by AbleSci AI