肖特基二极管
反向漏电流
磁滞
二极管
材料科学
肖特基势垒
量子隧道
光电子学
凝聚态物理
电流(流体)
泄漏(经济)
宽禁带半导体
电压
物理
热力学
宏观经济学
量子力学
经济
作者
B. Orfao,Mahmoud Abou Daher,R. Elviro Peña,B. G. Vasallo,S. Pérez,I. Iñiguez‐de‐la‐Torre,Gaudencio Paz-Martínez,J. Matéos,Y. Roelens,M. Zaknoune,T. González
摘要
In this paper, we report an analysis of reverse current mechanisms observed in GaN Schottky barrier diodes leading to hysteretic behavior of the I–V curves at low temperature. By means of DC measurements from 33 to 475 K, we demonstrate the presence of two leakage mechanisms when comparing the experiments with the results obtained using a unified model to predict the ideal reverse current of the diode. Poole–Frenkel emission is the dominant mechanism for temperatures above 200 K, while trap-assisted tunneling prevails for lower temperatures, where also, hysteresis cycles are revealed by means of DC dual-sweep voltage measurements. The energy of the corresponding traps has also been determined, being around 0.2 and 0.45 eV, respectively. The hysteresis phenomenon is attributed to the bias-induced occupancy of the energy states originating the leakage-current processes, which leads to the reduction of the reverse current after a high negative voltage is applied to the diode.
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