碲化镉光电
空位缺陷
材料科学
鞠躬
合金
电子能带结构
价带
宽禁带半导体
凝聚态物理
价(化学)
带隙
结晶学
化学
光电子学
冶金
物理
有机化学
哲学
神学
作者
Su‐Huai Wei,Shengbai Zhang,Alex Zunger
摘要
Using first principles band structure theory we have calculated (i) the alloy bowing coefficients, (ii) the alloy mixing enthalpies, and (iii) the interfacial valence band offsets for three Cd-based (CdS, CdSe, CdTe) compounds. We have also calculated defect formation energies and defect transition energy levels of Cd vacancy VCd and CuCd substitutional defect in CdS and CdTe, as well as the isovalent defect TeS in CdS. The calculated results are compared with available experimental data.
科研通智能强力驱动
Strongly Powered by AbleSci AI