成核
钻石
材料科学
无定形固体
纳米技术
场电子发射
透射电子显微镜
等离子体
薄膜
无定形碳
电子
化学物理
光电子学
复合材料
化学
结晶学
物理
量子力学
有机化学
作者
Adhimoorthy Saravanan,Bohr‐Ran Huang,Kamatchi Jothiramalingam Sankaran,Chung‐Li Dong,Nyan‐Hwa Tai,I‐Nan Lin
摘要
This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH4/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.
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