New synthesis and uses of high-specific-surface SiC as a catalytic support that is chemically inert and has high thermal resistance

A new method for preparation of high-specific-surface (60–400 m2/g) SiC is described. This method consists of the attack of high-specific-surface activated carbon by SiO vapor generated by the high-temperature reaction of Si and SiO2. The high specific surface is probably due both to the low temperature of the reaction between SiO and C and to the presence of a stable carbon skeleton. Before reaction, the carbon can be doped with different additives to improve the surface interaction between SiC and the impregnated active phase. The action of uranium doping is also shown. SEM, XRD, thermogravimetry, TPR, XPS, BET, and porosimetry have been used to characterize the supports and the catalysts. Test reactions (hydrodesulfurization by CoMo) are also reported.