Selective photodetectors based on GaAlAs/GaAs and GaN/GaInN heterostructures

We fabricated selective photodetectors on the basis of graded-gap GaAlAs/GaAs heterostructures and quantum-confined GaInN/GaN structures. At λ=λmax the monochromatic photosensitivity is in the range of 0.1–0.7 A/W (GaAlAs/GaAs), 0.15 A/W (GaInN/GaN). The methods are developed for control over the photosensitivity band width and its energy position in the 0.35–1.1 μm by varying technological factors (such as gap gradient, spacing between the metallurgical boundary and p–n junction, minority charge carrier diffusion length).