Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

Abstract A sample of the β-Ga 2 O 3 /wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga 2 O 3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga 2 O 3 /wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga 2 O 3 /GaN structure is 1.40 ± 0.08 eV.