材料科学
光电子学
数码产品
晶体管
有机电子学
柔性电子器件
电子线路
纳米技术
计算机科学
非易失性存储器
电压
电气工程
工程类
作者
Tim Leydecker,Martin Herder,Egon Pavlica,Gvido Bratina,Stefan Hecht,Emanuele Orgiu,Paolo Samorı́
标识
DOI:10.1038/nnano.2016.87
摘要
Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.
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