掺杂剂
材料科学
兴奋剂
硅
光电子学
反向偏压
晶体硅
二极管
作者
Elmar Lohmüller,Sabrina Werner,Stephan Maus,Andreas A. Brand,Ulrich Jäger,Florian Clement
标识
DOI:10.1002/pssa.201600010
摘要
We present 6‐inch n‐type Cz‐Si metal wrap through (MWT) solar cells with screen‐printed and fired contacts achieving energy conversion efficiencies up to 20.4%. These so‐called n‐type high‐performance MWT (n‐HIP‐MWT) structures feature different rear side configurations at the external p‐type contacts with respect to the phosphorus‐doped back surface field (BSF). It is shown that the alteration of the phosphorus dopant concentration at the silicon surface below the external rear p‐type contacts allows for both decreasing reverse‐bias‐induced losses and adjusting the current flowing in reverse mode.
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