Design of a broadband high‐efficiency extended resistive continuous Class‐B/J power amplifier with novel drain voltage waveforms

Abstract This article presents an extended resistive continuous broadband Class‐B/J (ERCB/J) power amplifier (PA) that incorporates two newly designed parameters in the drain voltage waveform. The incorporation of these newly designed parameters enables the PA to achieve a lower degradation rate of efficiency and output power over a wide bandwidth. To validate the effectiveness of the proposed method, a PA was designed, fabricated, and measured. The PA adopting commercially available GaN high electron mobility transistor technology operates from 1.0 to 3.0 GHz, exhibiting a fractional bandwidth of 100%. Across this frequency range, the PA delivers more than 39.6 dBm of saturated output power and more than 62% of drain efficiency. The measured results show good agreement with theoretical analysis and simulation, confirming the validity of the proposed method.