High‐Power, Narrow‐Linewidth, and Low‐Noise Quantum Dot Distributed Feedback Lasers

Abstract Single‐frequency semiconductor lasers represent a critical role in optical communications, light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom‐like quantum dot (QD) materials and advanced lateral gratings, a high‐power, ultra‐low‐noise 1.3 µm InAs/GaAs QD distributed feedback laser is demonstrated. Stable single‐longitudinal‐mode output power of 100 mW from 25 ℃ to 85 ℃ is achieved with a maximum side mode suppression ratio of 62.6 dB, and the variations of threshold current and slope efficiency over the temperature range are slight, indicting a high temperature stability. A record‐narrow intrinsic linewidth of 1.62 kHz is achieved at 55 ℃ with a white noise level of merely 515 Hz 2 Hz –1 , and a minimum averaged relative intensity noise of only –166 dB/Hz between 0.1 GHz and 20 GHz is obtained at 25 ℃. Furthermore, a strong tolerance to external optical feedback (〉 –14 dB) is demonstrated in the range from 25 ℃ to 85 ℃, with a maximum value of –8 dB at 85 ℃. This high‐quality single‐frequency laser fabricated with simplified processes and compact size paves the way for its future large‐scale applications such as high‐capacity optical communication, high‐precision optical detection, high‐speed optical interconnections, etc.