ZnSe nanoflakes/ ZnO quantum dots heterojunction-based bandgap engineered, flexible broadband photodetector on paper substrate

ZnO-based photodetectors exhibit high responsivity and high photon absorption coefficients. However, they show absorption in a narrow range and a low photogenerated carrier lifetime, limiting their potential applications in optoelectronics. This work demonstrates a high-performance broadband photodetector using Zinc Selenide nanoflakes (ZnSe) - Zinc Oxide (ZnO) quantum dots (QDs) heterojunction. Using a simple hydrothermal method on a flexible paper substrate, this work overcomes the complexity of previously reported fabrication techniques that involve electrospinning, electron beam lithography, spin coating, etc. Detailed chemical and structural characterization reveal the formation of cubic phase of ZnSe nanoflakes-like structure showing broad absorption in the visible region. In contrast, ZnO QDs show a hexagonal structure and absorption in the ultraviolet region, improving the photodetector's detection range. The device shows superior responsivity (Rʎ) of 17.2 µA/W, and 30 µA/W, with specific detectivity (D*) of 4.74×107 Jones, and 9.39×107 Jones, for ultraviolet, and visible, respectively. Detailed studies based on energy band diagrams are performed to understand the charge transport mechanism. The device shows excellent reliability and high stability for 500 bending cycles, thus, presenting a low-cost, facile approach for developing high-performance photodetectors that find utility in wearables, healthcare, and security/defense applications.