High-performance nonvolatile spin FETs from 2D metallic ferromagnetic and ferroelectric multiferroic heterostructure

All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on 2D multiferroic van der Waals heterostructures hold significant promise for spintronics. However, their performance is constrained by the limited availability of 2D magnetic materials capable of switching between metallic and semiconducting states, with tunable bandgaps controlled by ferroelectric polarization. Most research focuses on modifying semiconducting materials to achieve metallic behavior. We propose an approach that utilizes interface effects to convert metallic 2D magnetic materials into half-metals and induce half-semiconducting behavior via ferroelectric polarization. Density functional theory (DFT) calculations on the CrPS3/Sc2CO2 heterostructure show that Sc2CO2 polarization can modulate the electronic structure of CrPS3, switching it from half-metallic to half-semiconducting. Using this approach, we designed an SFET, and Nonequilibrium Green's function combined with DFT (NEGF-DFT) analysis revealed an on/off current ratio greater than 5.43 × 106%, with nearly 100% spin-polarized current at 6500 μA/μm and a bias voltage below 0.2 V. This method paves the way for high-performance SFETs that exceed the capabilities of current 2D materials.