Defect Engineering of TlPt2S3 for Highly Polarization-Sensitive Photodetector

Photodetectors based on two-dimensional materials exhibit excellent performance including high specific detectivity and fast response times. However, the polarization detection performance remains to be improved. Here, we propose a strategy to improve the polarization sensitivity of TlPt ₂ S ₃ -based photodetectors by defect engineering based on density functional theory (DFT) calculations and investigate their optoelectronic properties using quantum transport simulations at 0.2 V bias. Theoretical calculations show that the monolayer TlPt ₂ S ₃ achieves a multifunctional output of the optoelectronic device and obtains a larger photocurrent and high extinction ratio by defect engineering under linearly polarized light irradiation. These results indicate that TlPt ₂ S ₃ is expected to be one of the candidate materials for future optoelectronics and polarized light devices.