Study on the mechanism of temperature effect on proton irradiated charge-coupled device

In order to investigate the effect of temperature on proton radiation in the charge-coupled device (CCD), charge transfer efficiency (CTE) and dark current are tested at different temperatures on interline transfer CCD irradiated with protons. The aim of this paper is to analyze the characteristics of the defects introduced by proton irradiation in CCD and describe the mechanism of temperature effect on sensitive parameters of proton radiation effect in CCD. For the increasing temperature of −50°C ∼40°C, CTE begins with a decrease, followed by a minimum of 0°C, and ends with an increase; dark current (DC) increases significantly with the increasing temperature. By combining these results, a conclusion is made that temperature will affect the effect of defect introduced by proton, including the effect of the defect on the carrier mobility and lifetime, so as to affect the performance parameters of CCD.