钝化
钙钛矿(结构)
材料科学
光电二极管
阴极
甲基丙烯酸甲酯
甲基丙烯酸酯
光电子学
化学工程
光化学
复合材料
共聚物
化学
聚合物
图层(电子)
物理化学
工程类
作者
Sunny Kim,Jae‐Woo Park,Yushika Aggarwal,Shital Sharma,Eun Ha Choi,Byoungchoo Park
出处
期刊:Nanomaterials
[Multidisciplinary Digital Publishing Institute]
日期:2023-02-03
卷期号:13 (3): 619-619
被引量:10
摘要
For several years now, organic–inorganic hybrid perovskite materials have shown remarkable progress in the field of opto-electronic devices. Herein, we introduce a cathode-side passivation layer of poly(methyl methacrylate) (PMMA) for a highly efficient and stable self-powered CH3NH3PbI3 perovskite-based photodiode. For effective noise–current suppression, the PMMA passivation layer was employed between a light-absorbing layer of CH3NH3PbI3 (MAPbI3) perovskite and an electron transport layer of [6,6]-phenyl-C61-butyric acid methyl ester. Due to its passivation effect on defects in perovskite film, the PMMA passivation layer can effectively suppress interface recombination and reduce the leakage/noise current. Without external bias, the MAPbI3 photodiode with the PMMA layer demonstrated a significantly high specific detectivity value (~1.07 × 1012 Jones) compared to that of a conventional MAPbI3 photodiode without a PMMA layer. Along with the enhanced specific detectivity, a wide linear dynamic response (~127 dB) with rapid rise (~50 μs) and decay (~17 μs) response times was obtained. Furthermore, highly durable dynamic responses of the PMMA-passivated MAPbI3 photodiode were observed even after a long storage time of 500 h. The results achieved with the cathode-side PMMA-passivated perovskite photodiodes represent a new means by which to realize highly sensitive and stable self-powered photodiodes for use in developing novel opto-electronic devices.
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