Electrical control of metal–insulator transition and magnetism in asymmetric multiferroic InCrX3 (X = S, Se) monolayers

磁性 铁电性 单层 材料科学 凝聚态物理 多铁性 铁磁性 居里温度 纳米技术 光电子学 物理 电介质
作者
Yangyang Wu,Lei Cao,Guannan Li,Xiaokun Huang,Bingwen Zhang,Benling Gao,Guang Song
出处
期刊:Applied Physics Letters [American Institute of Physics]
卷期号:124 (16) 被引量:2
标识
DOI:10.1063/5.0188527
摘要

Electrical control of conductivity and magnetism in two-dimensional (2D) ferroelectric (FE) materials have attracted immense attention due to their fascinating properties and potential applications in designing field-effect transistors and high-density multistate data storage. Based on first-principles calculations and crystal field theory, we present an approach to obtain 2D intrinsic asymmetric multiferroics by replacing the In atom in the ferroelectric In2X3 monolayer (X = S, Se) with the Cr atom. Interestingly, it is found that the InCrX3 monolayers have two inequivalent polarized states, which are characterized by metal and semiconductor, respectively, which is related to the crystal field around Cr3+ ions. Thus, it provides a feasible way to realize electrical control of reversible metal–insulator transition induced by ferroelectric switching, indicating that the InCrX3 monolayers can be used as the channel materials in the FE memory technology. In addition, because of the existence of the Cr3+ ions, the InCrX3 monolayers also exhibit robust ferromagnetism with different Curie temperatures and magnetocrystalline anisotropy energies, which can provide a good platform for realizing the strong coupling between the magnetism and ferroelectricity. These interesting results provide a feasible way to design asymmetric FE materials with regulatable conductivity and magnetism that can enable a wide range of applications in nanodevices.
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