材料科学
透射率
光电子学
红外线的
透明导电膜
量子点
电极
氧化铟锡
铟
导电体
量子效率
太阳能电池
纳米技术
光学
图层(电子)
复合材料
化学
物理化学
物理
作者
Ciyu Ge,Erqi Yang,Xinzhao Zhao,Can Yuan,Sen Li,Chong Dong,Yingfeng Ruan,Liuchong Fu,Yuming He,XiangBin Zeng,Haisheng Song,Bin Hu,Chao Chen,Jiang Tang
出处
期刊:Small
[Wiley]
日期:2022-09-23
卷期号:: 2203677-2203677
标识
DOI:10.1002/smll.202203677
摘要
Infrared solar cells are regarded as candidates for expanding the solar spectrum of c-Si cells, and the window electrodes are usually transparent conductive oxide (TCO) such as widely used indium tin oxide material. However, due to the low transmittance of the TCO in the near-infrared region, most near-infrared light cannot penetrate the electrode and be absorbed by the active layer. Here, the propose a simple procedure to fabricate the window materials with high near-infrared transmittance and high electrical conductivity, namely the hydrogen-doped indium oxide (IHO) films prepared by room temperature magnetron sputtering. The low-temperature annealed IHO conductive electrodes exhibit high mobility of 98 cm2 V-1 s-1 and high infrared transmittance of 85.2% at 1300 nm, which endows the lead quantum dot infrared solar cell with an improved short-circuit current density of 37.2 mA cm-2 and external quantum efficiency of 70.22% at 1280 nm. The proposed preparation process is simple and compatible with existing production lines, which gifts the IHO transparent conductive film great potential in broad applications that simultaneously require high infrared transmittance and high conductivity.
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