PCB embedded power package with reinforced top-side chip contacts

This paper presents a novel approach to embed power semiconductor devices into a printed circuit board. Here, IGBTs and diodes with reinforced top side chip contact are used in an IGBT half bridge with 25 A / 1200 V rating. Thermal simulations highlight the improved thermal impedance caused by the reinforced top contact and the benefits of the insulated copper substrate compared to a commercial DBC-based reference module. The fabrication process is discussed in detail and preliminary test results are presented. The results of the thermal characterization support the theoretical considerations.