The Silicon:Colloidal Quantum Dot Heterojunction

Advanced MaterialsVolume 27, Issue 45 p. 7445-7450 Communication The Silicon:Colloidal Quantum Dot Heterojunction Silvia Masala, Silvia Masala Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi ArabiaSearch for more papers by this authorValerio Adinolfi, Valerio Adinolfi Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, CanadaSearch for more papers by this authorJon-Paul Sun, Jon-Paul Sun Department of Physics and Atmospheric Science, Dalhousie University, 1459, Oxford Street, Halifax, Nova Scotia, B3H 4R2, CanadaSearch for more papers by this authorSilvano Del Gobbo, Silvano Del Gobbo Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi ArabiaSearch for more papers by this authorOleksandr Voznyy, Oleksandr Voznyy Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, CanadaSearch for more papers by this authorIllan J. Kramer, Illan J. Kramer Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, CanadaSearch for more papers by this authorIan G. Hill, Ian G. Hill Department of Physics and Atmospheric Science, Dalhousie University, 1459, Oxford Street, Halifax, Nova Scotia, B3H 4R2, CanadaSearch for more papers by this authorEdward H. Sargent, Corresponding Author Edward H. Sargent Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, CanadaE-mail: ted.sargent@utoronto.caSearch for more papers by this author Silvia Masala, Silvia Masala Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi ArabiaSearch for more papers by this authorValerio Adinolfi, Valerio Adinolfi Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, CanadaSearch for more papers by this authorJon-Paul Sun, Jon-Paul Sun Department of Physics and Atmospheric Science, Dalhousie University, 1459, Oxford Street, Halifax, Nova Scotia, B3H 4R2, CanadaSearch for more papers by this authorSilvano Del Gobbo, Silvano Del Gobbo Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900 Saudi ArabiaSearch for more papers by this authorOleksandr Voznyy, Oleksandr Voznyy Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, CanadaSearch for more papers by this authorIllan J. Kramer, Illan J. Kramer Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, CanadaSearch for more papers by this authorIan G. Hill, Ian G. Hill Department of Physics and Atmospheric Science, Dalhousie University, 1459, Oxford Street, Halifax, Nova Scotia, B3H 4R2, CanadaSearch for more papers by this authorEdward H. Sargent, Corresponding Author Edward H. Sargent Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, CanadaE-mail: ted.sargent@utoronto.caSearch for more papers by this author First published: 13 October 2015 https://doi.org/10.1002/adma.201503212Citations: 42Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description adma201503212-sup-0001-S1.pdf817.5 KB Supplementary Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume27, Issue45December 2, 2015Pages 7445-7450 RelatedInformation