物理
半导体
异质结
电子
超晶格
硅
液氦
凝聚态物理
光电子学
工程物理
氦
原子物理学
量子力学
作者
Tsuneya Ando,A. B. Fowler,Frank Stern
标识
DOI:10.1103/revmodphys.54.437
摘要
The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
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