调制(音乐)
光电子学
材料科学
计算机科学
物理
声学
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2021-01-01
卷期号:: 267-298
标识
DOI:10.1016/b978-0-12-819643-4.00014-8
摘要
A pure byproduct of electrostatic doping and FD-SOI, the band-modulation devices are PIN diodes with dual gate control. With the two gates located side-by-side on the surface, the device is called field effect diode (FED). The Z2-FET is a simpler structure, with underlapped top gate and back-gate action, already used for the Hocus-Pocus diode and I-MOS. The diode is forward-biased and the two gates receive opposite-polarity voltages such as to emulate a virtual NPNP structure. The band-modulation devices have outstanding memory and fast switching capability.
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