材料科学
扫描电子显微镜
锆酸盐
电解质
化学工程
氧化锶
氧化钇稳定氧化锆
氧化物
极化(电化学)
薄膜
介电谱
分析化学(期刊)
电化学
复合材料
纳米技术
立方氧化锆
电极
冶金
钛酸酯
化学
物理化学
陶瓷
工程类
色谱法
作者
Matthias Riegraf,Feng Han,Noriko Sata,Rémi Costa
标识
DOI:10.1021/acsami.1c11175
摘要
To minimize alteration of the La0.6Sr0.4Co0.2Fe0.8O3−δ (LSCF)/Gd0.2Ce0.8O2−δ(CGO20)/Y0.06Zr0.94O2−δ(3YSZ) interface via strontium zirconate formation in solid oxide cells, electron beam physical vapor deposition was employed to manufacture dense, thin gadolinium-doped ceria (CGO) interlayers. CGO layers with thicknesses of 0.15, 0.3, and 0.5 μm were integrated in state-of-the-art 5 × 5 cm2-large electrolyte-supported cells, and their performance characteristics and degradation behavior were investigated. Electrochemical impedance spectroscopy measurements are correlated with a postmortem scanning electron microscopy/energy-dispersive X-ray spectroscopy analysis to show that 0.15 μm-thick layers lead to the formation of a continuous Sr-containing secondary phase at the CGO/YSZ interface, likely related to the formation of a SrO–ZrO2 phase. Major performance losses were confirmed by an increase in both Ohmic and polarization resistance with an increase in the frequency region ∼103 Hz. Cells with 0.3 μm- and 0.5 μm-thick CGO layers showed similar high performance and low degradation rates over a testing period of ∼800 h. The YSZ/CGO interface of the cells with a 0.3 μm-thick CGO layer showed the formation of a discontinuous Sr-containing secondary phase; however, performance losses were still successfully prevented. Furthermore, it is observed that 0.5 μm-thick CGO layers were sufficient to suppress the formation of the Sr-containing secondary phase.
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