Direct imaging of the depletion region of an InP p–n junction under bias using scanning voltage microscopy

We directly image an InP p–n junction depletion region under both forward and reverse bias using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique. The SVM results are compared to those obtained with scanning spreading resistance microscopy (SSRM) measurements under zero bias on the same sample. The SVM and SSRM data are shown to agree with the results of semiclassical calculations. The physical basis of the SVM measurement process is also discussed, and we show that the measured voltage is determined by the changes in the electrostatic potential and the carrier concentration at the SVM tip with and without the applied bias.