铁电性
材料科学
原子单位
正交晶系
磁畴壁(磁性)
极化(电化学)
领域(数学分析)
电场
领域工程
凝聚态物理
结晶学
晶体结构
光电子学
电介质
物理
磁场
计算机科学
化学
量子力学
数学分析
物理化学
软件系统
基于构件的软件工程
数学
程序设计语言
磁化
软件
作者
Weitong Ding,Yuke Zhang,Lingling Tao,Qingxiang Yang,Yue Zhou
标识
DOI:10.1016/j.actamat.2020.07.012
摘要
The HfO2-based ferroelectrics have aroused considerable attention due to their potential application in silicon process-compatible memory devices. However, the ferroelectricity origin and the domain evolution have not yet been well understood. It is now generally accepted the orthorhombic Pca21 phase is one of ferroelectric phases for HfO2. In this work, by performing density functional theory calculations, we systematically studied the domain wall structures and evolution based on the Pca21 ferroelectric phase. More specifically, the atomic structures of ten types of possible 180° and 90° ferroelectric domain walls are predicted and explored. And the motion of certain domain walls is expected as the microscopic mechanisms of the polarization switching and ferroelectricity activation of Pca21 HfO2 under external electric field. Our results are in good agreement with the recent experimental results on ferroelectric domain walls in HfO2-based epitaxial thin-film and are helpful to understand the ferroelectricity origin of the HfO2-based ferroelectrics.
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