SoftBV – a software tool for screening the materials genome of inorganic fast ion conductors

动力学蒙特卡罗方法 力场(虚构) 软件 密度泛函理论 蒙特卡罗方法 计算科学 计算机科学 统计物理学 化学 物理 计算化学 人工智能 数学 统计 程序设计语言
作者
Haomin Chen,Lee Loong Wong,Stefan Adams
出处
期刊:Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials [Wiley]
卷期号:75 (1): 18-33 被引量:417
标识
DOI:10.1107/s2052520618015718
摘要

The identification of materials for advanced energy-storage systems is still mostly based on experimental trial and error. Increasingly, computational tools are sought to accelerate materials discovery by computational predictions. Here are introduced a set of computationally inexpensive software tools that exploit the bond-valence-based empirical force field previously developed by the authors to enable high-throughput computational screening of experimental or simulated crystal-structure models of battery materials predicting a variety of properties of technological relevance, including a structure plausibility check, surface energies, an inventory of equilibrium and interstitial sites, the topology of ion-migration paths in between those sites, the respective migration barriers and the site-specific attempt frequencies. All of these can be predicted from CIF files of structure models at a minute fraction of the computational cost of density functional theory (DFT) simulations, and with the added advantage that all the relevant pathway segments are analysed instead of arbitrarily predetermined paths. The capabilities and limitations of the approach are evaluated for a wide range of ion-conducting solids. An integrated simple kinetic Monte Carlo simulation provides rough (but less reliable) predictions of the absolute conductivity at a given temperature. The automated adaptation of the force field to the composition and charge distribution in the simulated material allows for a high transferability of the force field within a wide range of Lewis acid–Lewis base-type ionic inorganic compounds as necessary for high-throughput screening. While the transferability and precision will not reach the same levels as in DFT simulations, the fact that the computational cost is several orders of magnitude lower allows the application of the approach not only to pre-screen databases of simple structure prototypes but also to structure models of complex disordered or amorphous phases, and provides a path to expand the analysis to charge transfer across interfaces that would be difficult to cover by ab initio methods.
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