各向异性
凝聚态物理
材料科学
电子迁移率
光电子学
物理
光学
作者
Lijia Tong,Junjie He,Min Yang,Zheng Chen,Jing Zhang,Yanli Lu,Ziyuan Zhao
摘要
Converting FGaNH to HGaNH can significantly suppress hole mobility (even close to zero) and result in a transition from p-type-like semiconductor (FGaNH) to n-type-like semiconductor (HGaNH).
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