纳米线
汽-液-固法
材料科学
氧化物
纳米技术
铟
金属
氧化铟锡
锡
纳米结构
化学工程
冶金
薄膜
工程类
作者
Zhiwei Zhu,Kazuki Nagashima,Masaru Suzuki,Masaki Kanai,Takeshi Yanagida
出处
期刊:Nano Letters
[American Chemical Society]
日期:2016-12-01
卷期号:16 (12): 7495-7502
被引量:32
标识
DOI:10.1021/acs.nanolett.6b03227
摘要
Vapor–liquid–solid (VLS) growth process of single crystalline metal oxide nanowires has proven the excellent ability to tailor the nanostructures. However, the VLS process of metal oxides in general requires relatively high growth temperatures, which essentially limits the application range. Here we propose a rational concept to reduce the growth temperature in VLS growth process of various metal oxide nanowires. Molecular dynamics (MD) simulation theoretically predicts that it is possible to reduce the growth temperature in VLS process of metal oxide nanowires by precisely controlling the vapor flux. This concept is based on the temperature dependent “material flux window” that the appropriate vapor flux for VLS process of nanowire growth decreases with decreasing the growth temperature. Experimentally, we found the applicability of this concept for reducing the growth temperature of VLS processes for various metal oxides including MgO, SnO2, and ZnO. In addition, we show the successful applications of this concept to VLS nanowire growths of metal oxides onto tin-doped indium oxide (ITO) glass and polyimide (PI) substrates, which require relatively low growth temperatures.
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