Low-dark current III-V photodiodes grown on silicon substrate

InAlGaAs/InP p-i-n photodiodes epitaxially grown on silicon substrate with a dark current density as low as 1.3 mA/cm ² at -3 V are demonstrated. Responsivity, bandwidth, and output power at 1-dB compression are 0.76 A/W, 8 GHz, and -3.4 dBm, respectively.