Tolerance of Corundum‐Structured Tin‐Doped Indium Oxide Thin Films to Gamma‐ray Irradiation

Corundum‐structured Sn‐doped indium oxide (rh‐ITO) is investigated as a novel transparent conductive oxide. Herein, its gamma‐ray tolerance up to a total dose of 77 kGy is examined for potential applications in harsh environments, such as space. The investigations are conducted on rh‐ITO with Sn concentrations of 0 and 5 at%. X‐ray diffraction 2θ‐ω scan analysis reveals that no phase separation occurs due to gamma‐ray irradiation. The carrier concentration in undoped rh‐In 2 O 3 increases after irradiation, indicating that the gamma rays displace the oxygen atoms and form oxygen defects that generate donors. The high visible light transparency of rh‐In 2 O 3 and rh‐ITO is maintained after irradiation. This study demonstrates the high stability of rh‐ITO to gamma‐ray irradiation until 77 kGy dose. This work contributes to the application of rh‐ITO as an electrode in high‐radiation environments.