Design and Performance of High-Speed InGaAs/InGa0.351As0.755P Modified-Pin Photodiodes

A high-speed InGaAs/InGa 0.351 A s0.755 P modified-pin photodiode (M-PIN-PD) is presented and investigated. The 3-dB bandwidth of the M-PIN-PD with an absorber layer thickness of 800 nm is 48 GHz and a responsivity of 0.78 A/W.