The effect of DRIE notching on field emission enhanced breakdown in SOI based MEMS electrodes

Abstract Microscale (<5 μ m) gas breakdown is usually dominated by field emission, which is influenced largely by electrode surface morphology. At present, there is a large number of studies on the breakdown and discharge of different metal electrode geometry and electrode spacing as well as micro-electro-mechanical system (MEMS) device structures, but few studies on the breakdown of MEMS electrodes affected by notching, which will greatly change the electrode surface morphology but is difficult to completely avoid in deep reactive ion etching process based on silicon on insulator (SOI) wafer. In response to this situation, this paper conducted breakdown tests and field emission tests on MEMS samples with and without notching. It was found that samples with notching could withstand more breakdowns of about 6–13 times before the formation of internal resistance, increased by 200%–300% compared with samples without notching, and have a lower breakdown voltage of about 210 V, 16% lower than that of samples without notching. In addition, it was also found that for the samples with notching, the field enhancement factor gradually decreases with the increase of the number of breakdown events. When the field enhancement factor decreases to about 100, the subsequent breakdown is highly likely to cause the sample to form electrical connection, thus completely damaging the sample. Above conclusions have certain reference value for designing the actuation voltage of MEMS devices based on SOI wafers.