材料科学
相变存储器
堆栈(抽象数据类型)
可靠性(半导体)
光电子学
数据保留
非易失性存储器
电子工程
计算机科学
作者
Giusy Lama,Mathieu Bernard,Guillaume Bourgeois,Julien Garrione,Valentina Meli,Niccolo Castellani,C. Sabbione,L. Prazakova,Diana-Stephany Fernandez Rodas,Emmanuel Nolot,Marie-Claire Cyrille,Francois Andrieu,Gabriele Navarro
标识
DOI:10.1109/ted.2022.3184659
摘要
Sb-rich GeSbTe-based phase-change memories (PCMs) were studied in the past years for their high switching speed to target storage class memory (SCM) applications. In this work, we show the advantages of an engineered multilayered Sb-rich GeSbTe stack compared with standard bulk reference materials. The studied multilayer-based PCM devices feature a lower programming current with respect to the equivalent bulk ones, preserving a high programming speed. Furthermore, multilayered Sb-rich GeSbTe brings better endurance performances for a wide programming current range and extremely reduced cycle-to-cycle (C2C) and device-to-device (D2D) variability along cycling verified in 4 kb PCM arrays. These results confirm improved yield and reliability obtained, thanks to multilayered PCM solution.
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