凝聚态物理
垂直的
磁阻随机存取存储器
反铁磁性
磁化
磁场
各向异性
铁磁性
扭矩
材料科学
物理
光学
随机存取存储器
几何学
热力学
量子力学
计算机科学
数学
计算机硬件
作者
Wenqing He,Caihua Wan,Cuixiu Zheng,Yizhan Wang,Xiao Wang,Tianyi Ma,Yuqiang Wang,Chenyang Guo,Xuming Luo,Maxim E. Stebliy,Guoqiang Yu,Yaowen Liu,Alexey V. Ognev,Alexander S. Samardak,X. F. Han
出处
期刊:Nano Letters
[American Chemical Society]
日期:2022-07-18
卷期号:22 (17): 6857-6865
被引量:18
标识
DOI:10.1021/acs.nanolett.1c04786
摘要
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been developed;however,new structures with a simple stack structure and MRAM compatibility are urgently needed.Herein,a typical structure in a perpendicular spin-transfer torque MRAM,the Pt/Co multilayer and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy, was observed to possess an intrinsic interlayer chiral interaction between neighboring magnetic layers,namely the interlayer Dzyaloshinskii-Moriya interaction (DMI) effect. Furthermore, using a current parallel to the eigenvector of the interlayer DMI, we switched the perpendicular magnetization of both structures without a magnetic field, owing to the additional symmetry-breaking introduced by the interlayer DMI. This SOT switching scheme realized in the Pt/Co multilayer and its synthetic antiferromagnet structure may open a new avenue toward practical perpendicular SOT-MRAM and other SOT devices.
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